Variable and Orbital-Dependent Spin-Orbit Field Orientations in an InSb Double Quantum Dot Characterized via Dispersive Gate Sensing

Utilizing dispersive gate sensing (DGS), we investigate the spin-orbit field (${\mathbf{B}}_{\mathrm{SO}}$) orientation in a many-electron double quantum dot (DQD) defined an $\mathrm{In}\mathrm{Sb}$ nanowire. While characterizing interdot tunnel couplings, find measured signal depends on electron-charge occupancy, as well amplitude and of external magnetic field. The is mostly insensitive to when DQD occupied by total odd number electrons. For even electrons, reduced finite aligns with effective ${\mathbf{B}}_{\mathrm{SO}}$ orientation. This fact enables identification orientations for different electron occupancies. varies drastically between charge transitions, generally neither perpendicular nanowire nor chip plane. Moreover, similar pairs transitions involving same valence orbital, such pairs. Our work demonstrates practicality DGS interactions systems, without requiring any current flow through device.